Annealed Gallium-Doped Zinc Oxide (ZnO:Ga) Thin Films for Sub-ppm NO2 Sensing

Annealed Gallium-Doped Zinc Oxide (ZnO:Ga) Thin Films for Sub-ppm NO2 Sensing

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In Seasonal X-mas this work, gallium-doped zinc oxide was deposited with a Radio Frequency Magnetron sputtering method on test platforms.The NO2 sensing properties of the resulting devices were studied.The sensing properties of ZnO:Ga thin films were successfully stabilized through annealing in dry air, and then improved by either a thinning of the layer or an increase in the roughness of the substrate.

The sensing response with an Rgas/Rair of 15 for 100 ppb of Pillow Covers NO2 under 50% humidity was obtained, with a response time below 10 min.